The mercury microprobe for investigation of local electrophysical properties of semiconductor structures

Abstract

The construction of mercury microprobe has been proposed for measurement of electrophysical characteristics of semiconductor materials and IS(MIS) structures with 5—25 micron locality. Local electrophysical properties of technological Si–SiO2 structures with thin oxides in the region of electrically active defects on the silicon surface have been investigated. The influence of mechanical stresses near the edge of MIS structure electrodes on the local values of fixed charge in oxide has been shown.

Keywords

• MIS structure
• mercury probe
• electrically active defects
• capacity-voltage characteristic
• mechanical stresses