Study of MoN gate impact on GaN high electron mobility transistor

Abstract

Abstract In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions. The Schottky gate is studied through forward and reverse characteristics with different processed MoN, which is compared with the standard Ni gate. Similar DC and radio frequency (RF) performances are obtained with MoN and Ni gate, while MoN demonstrated higher reliability than Ni gate through RF aging test.

Keywords

• high electron mobility transistors
• high‐temperature electronics
• semiconductor device reliability