Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

• Hockicko Peter,
• Bury Peter,
• Sidor Peter,
• Kobayashi Hikaru,
• Takahashi Masao,
• Yanase Takashi

Affiliations

Hockicko Peter

Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia

Bury Peter

Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia

Sidor Peter

Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia

Kobayashi Hikaru

Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

Takahashi Masao

Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

Yanase Takashi

Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan