Symmetry-Engineering-Induced In-Plane Polarization Enhancement in Ta₂NiS₅/CrOCl van der Waals Heterostructure

Abstract

Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy via polarized Raman spectroscopy and electrical transport measurements. Compared with pristine Ta2NiS5, the anisotropy ratio of the Raman intensities for the B2g, 2Ag, and 3Ag modes increased in the heterostructure. More importantly, the anisotropy ratios of conductivity and mobility in the heterostructure increased by one order of magnitude. Specifically speaking, the conductivity ratio changed from ~2.1 (Ta2NiS5) to ~15 (Ta2NiS5/CrOCl), while the mobility ratio changed from ~2.7 (Ta2NiS5) to ~32 (Ta2NiS5/CrOCl). Such prominent enhancement may be attributed to the symmetry reduction caused by lattice mismatch at the heterostructure interface and the introduction of strain into the Ta2NiS5. Our research provides a new perspective for enhancing artificial anisotropy physics and offers feasible guidance for future functionalized electronic devices.

Keywords

• Ta₂NiS₅/CrOCl
• symmetry engineering
• van der Waals heterostructure
• enhanced anisotropy
• angle-dependent Raman spectrum
• electrical transport