An analytical method for determining the concentration of an alloying impurity to reduce the temperature error of a semiconductor pressure sensor

Abstract

Background. An analytical method for determining the optimal concentration of an alloying impurity of a semiconductor piezoresistive pressure sensor is considered. The aim of the work is to find a numerical value of the dopant concentration, which allows minimizing the temperature error of the output signal of a semiconductor pressure sensor. Materials and methods. The study is carried out by the method of compiling an algorithm for calculating the concentration of an alloying impurity, at which the temperature dependence is minimal in the MathCAD software package. Results. Numerical values of the concentration of the alloying impurity of a semiconductor strain-resistive sensor are obtained, numerical values of the temperature error of the output signal of the pressure sensor are determined for the concentration values found. Conclusions. Based on the analysis of the data obtained, the value of the dopant concentration was determined, at which the temperature error is minimal.

Keywords

• dopant concentration
• semiconductor piezoresistive pressure sensor
• temperature error