Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Abstract

Laser junction temperature (Tj) is an essential parameter that directly affects the light power and lifetime of semiconductor lasers. Here, we investigate the effect of Tj on an InAs/GaAs quantum dot (QD) laser grown on a Si(001) substrate. Under 1% low pulsed current (1 µs pulse width and 100 µs period), the pure temperature-induced mode shift rate is 0.084 nm/°C. By increasing the duty cycle and measuring the corresponding mode wavelength shift, the laser’s Tj under the continuous-wave (Tj-CW) mode is predicted to be from 31.1 to 81.6 °C when the injection current increases from 100 to 550 mA. Next, the average thermal resistance is 36.2 °C/W. Moreover, the non-negligible increase in Tj-CW is analyzed to significantly reduce the mean-time-to-failure of Si-based QD laser, especially for cases under high CW injection currents. These results provide an accurate reference for the thermal analysis of silicon-based QD lasers and point the way to high performance on-chip light sources by improving the laser heat accumulation.