Interfacial free energies determined from binary embedded alloy nanocluster geometry

C. N. Boswell-Koller; S. J. Shin; J. Guzman; M. P. Sherburne; K. C. Bustillo; C. A. Sawyer; J. P. Mastandrea; J. W. Beeman; J. W. Ager III; E. E. Haller; D. C. Chrzan

doi:10.1063/1.4828937

APL Materials (Nov 2013)

Interfacial free energies determined from binary embedded alloy nanocluster geometry

C. N. Boswell-Koller,
S. J. Shin,
J. Guzman,
M. P. Sherburne,
K. C. Bustillo,
C. A. Sawyer,
J. P. Mastandrea,
J. W. Beeman,
J. W. Ager III,
E. E. Haller,
D. C. Chrzan

Affiliations

C. N. Boswell-Koller: Department of Chemistry and Biochemistry, Ohio University, Athens, Ohio 45701, USA
S. J. Shin: Condensed Matter and Materials Divison, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
J. Guzman: Maxim Integrated Products, San Antonio, Texas 78251, USA
M. P. Sherburne: Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
K. C. Bustillo: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
C. A. Sawyer: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
J. P. Mastandrea: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
J. W. Beeman: Materials Sciences Divison, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
J. W. Ager III: Materials Sciences Divison, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
E. E. Haller: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
D. C. Chrzan: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA

DOI: https://doi.org/10.1063/1.4828937
Journal volume & issue: Vol. 1, no. 5
pp. 052105 – 052105-6

Abstract

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The equilibrium geometries of embedded binary eutectic alloy nanostructures are used to determine the interfacial free energies between two phases of a strongly segregating alloy and the matrix. The solid Ge-SiO2 interfacial free energy at 600°C is determined to be 0.82–0.99 J/m2, in good agreement with estimates obtained from stress relaxation experiments.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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