Nature Communications (Jun 2016)

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

  • Tim Burgess,
  • Dhruv Saxena,
  • Sudha Mokkapati,
  • Zhe Li,
  • Christopher R. Hall,
  • Jeffrey A. Davis,
  • Yuda Wang,
  • Leigh M. Smith,
  • Lan Fu,
  • Philippe Caroff,
  • Hark Hoe Tan,
  • Chennupati Jagadish

DOI
https://doi.org/10.1038/ncomms11927
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 7

Abstract

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Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.