Optimizing Performance of Coaxis Planar-Gated ZnO Nanowire Field-Emitter Arrays by Tuning Pixel Density

Songyou Zhang; Xiuqing Cao; Guofu Zhang; Shaozhi Deng; Jun Chen

doi:10.3390/nano12050870

Nanomaterials (Mar 2022)

Optimizing Performance of Coaxis Planar-Gated ZnO Nanowire Field-Emitter Arrays by Tuning Pixel Density

Songyou Zhang,
Xiuqing Cao,
Guofu Zhang,
Shaozhi Deng,
Jun Chen

Affiliations

Songyou Zhang: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Xiuqing Cao: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Guofu Zhang: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Shaozhi Deng: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Jun Chen: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

DOI: https://doi.org/10.3390/nano12050870
Journal volume & issue: Vol. 12, no. 5
p. 870

Abstract

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Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors. As the application requires high-pixel-density FEAs, how the pixel density affects the emission performance of the gated ZnO nanowire FEAs needs investigating. In this paper, the performance of coaxis planar -gated ZnO nanowire FEAs was simulated under different pixel sizes while keeping the lateral geometric parameter in proportion. The variations in emission current and gate modulation with pixel size were obtained. Using the obtained device parameters, the coaxis planar-gated ZnO nanowire FEAs were prepared. Field emission measurement results showed that a current density of 3.2 mA/cm2 was achieved from the fabricated ZnO nanowire FEAs when the gate voltage was 140 V. A transconductance of 253 nS was obtained, indicating effective gate control. The improved performance is attributed to optimized gate modulation.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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