LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

Abstract

We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive area of 1 × 1 mm2, operating at 205 K in the 3–11 µm spectral range, capable of achieving a position resolution of 0.3–0.6 µm using 10.5 µm 2.6 mW radiation focused on a spot of the 1/e2 diameter 240 µm, with a box-car integration time of 1 µs and correlated double sampling.

Keywords

• LWIR
• HgCdTe
• PSD
• position-sensing detector
• photodetector
• lateral effect