Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations

Abstract

When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized channels with shorter lengths tend to increase operational speed of the devices. Leakages are a significant adverse consequence of transistor miniaturization which is addressed in the ongoing study. The design of 10 nm NanoSheet FinFET (NS-FinFET) using Gate All Around (GAA) technology with Silicon On Insulator (SOI) is structured using a Visual Technology Computer-Aided Design (Visual TCAD) simulator. The work emphasizes on uniformly doped multi-channel SOI NS-FinFET with varying Doping Concentrations ranging between 1 × 1016 and 1 × 1018. The different space regions include those with single dielectric materials, such as (Air, SiO2 and HfO2), and dual dielectric materials, such as (HfO2 + SiO2). The effects of GAA nm-technology NS-FinFET devices are comprehensively examined for parameters including (VGS-ID) transfer characteristics, Threshold Voltage (Vth), Ion/Ioff ratio and Subthreshold Swing (SS) by varying doping concentrations and space materials.

Keywords

• NanoSheet FinFET (NS-FinFET)
• gate all around (GAA)
• silicon on insulator (SOI)
• low K and high K dielectric material
• doping concentration
• short channel effect (SCE)