Revealing surface-state transport in ultrathin topological crystalline insulator SnTe films

Abstract

SnTe is a topological crystalline insulator that exhibits crystal symmetry protected topological surface states (SS), which are useful for the development of novel devices, such as low-dissipation transistors. However, major obstacles remain to probe the SS and realize the application of SnTe and other topological insulators. Due to unintentional doping by Sn vacancies, bulk conduction may overwhelm the transport through SS in SnTe. Synthesis of SnTe films thin enough to suppress bulk conduction has proven difficult due to the formation of discontinuous domain structures. By introducing a novel deposition method that builds upon molecular beam epitaxy, we achieve ultrathin continuous films of single-orientation SnTe (001) on SrTiO3 (STO) (001) substrates. We separate the carrier concentrations in the bulk and in the SS and discover that conduction through the SS dominates (a majority of hole carriers occupy the SS) in films thinner than 40 unit cells, with a large temperature independent hole density of SS nS = 5 × 1014 cm−2. Unlike the depletion of SS carriers observed at the vacuum/SnTe interface that inhibits topological behavior, we show that SS carriers are buried and protected from depletion at the SnTe/STO interface, which is enabled by the relatively large bandgap of STO and its favorable band alignment with SnTe. This work provides an important pathway for probing and realizing SS transport in SnTe and other TIs even when bulk conduction coexists.