Anisotropy oxidation behavior and mechanism of textured Ti3(SiAl)C2 ceramic

Abstract

Abstract Adjusting the grain growth orientation may be a feasible way to improve the oxidation resistance. In this work, textured Ti3(SiAl)C2 ceramic was successfully fabricated via the spark plasma sintering technique. The crystal orientation and microstructure were investigated by XRD combined with EBSD. The oxidation behavior of textured Ti3(SiAl)C2 was investigated at 1000–1300 °C for 10 h. The results showed that the oxidation was significantly anisotropic and the surface parallel to the compression direction exhibited better oxidation resistance below 1200 °C. The improved oxidation resistance was primarily attributed to the formation of passivated Al2O3 scale by rapid out-diffusion of Al elements on the orientated (hko) planes in textured Ti3(SiAl)C2. The formation of oxide scales was strongly dependent on the crystallographic orientation of Ti3(SiAl)C2.