APL Materials (Apr 2016)

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

  • I. Vrejoiu,
  • C. Himcinschi,
  • L. Jin,
  • C.-L. Jia,
  • N. Raab,
  • J. Engelmayer,
  • R. Waser,
  • R. Dittmann,
  • P. H. M. van Loosdrecht

DOI
https://doi.org/10.1063/1.4945658
Journal volume & issue
Vol. 4, no. 4
pp. 046103 – 046103-10

Abstract

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Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.