Investigating the preparation process of excellent Cu3VSe4 absorption layer prepared by amine-thiol system

Yanqing Liu; Yanchun Yang; Junting Ren; Guonan Cui; Xin Zhao; Rui Wang; Lulu Bai; Chengjun Zhu

Arabian Journal of Chemistry (Jul 2024)

Investigating the preparation process of excellent Cu3VSe4 absorption layer prepared by amine-thiol system

Yanqing Liu,
Yanchun Yang,
Junting Ren,
Guonan Cui,
Xin Zhao,
Rui Wang,
Lulu Bai,
Chengjun Zhu

Affiliations

Yanqing Liu: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China
Yanchun Yang: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; School of Physical Science and Technology, Inner Mongolia University, 2352 West University Road, Huhhot, Inner Mongolia 010021, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Corresponding author at: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China.
Junting Ren: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China
Guonan Cui: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China
Xin Zhao: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China
Rui Wang: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China
Lulu Bai: School of Physics and Electronic Information, Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China; Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University, 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022, China
Chengjun Zhu: School of Physical Science and Technology, Inner Mongolia University, 2352 West University Road, Huhhot, Inner Mongolia 010021, China; Corresponding author.

Journal volume & issue: Vol. 17, no. 7
p. 105839

Abstract

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Cu3VSe4 material has become a new kind of photovoltaic absorber due to its optical bandgap matching light-absorbing, abundant elements in crust, and high light absorption coefficient. Here, we prepared Cu3VSe4 thin films by amine-thiol method and investigated the preparation process of excellent Cu3VSe4 absorption layer for the first time. The effects of various Cu/V ratios on the morphology, structure, and electrical properties of the films are studied. XRD and Raman results show that pure-phase Cu3VSe4 films are obtained with the Cu/V ratios lower than 2.9. SEM results simply adjusting the Cu/V ratio cannot obtain a compact selenized Cu3VSe4 thin films. The best crystallinity of thin film with 2.8 of Cu/V ratio is named as Cu2.8VSe4 and selected as the representative. Though optimizing the selenization conditions, a dense morphology and good electrical properties of the absorption layer can be prepared under 570 °C of the high-temperature process. Our findings can lay the favorable foundation for high-efficiency Cu3VSe4 devices.

Published in Arabian Journal of Chemistry

ISSN: 1878-5352 (Print)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Chemistry
Website: http://www.journals.elsevier.com/arabian-journal-of-chemistry/

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