Journal of Taibah University for Science (Dec 2022)

Impact of Nd3+ and Ni2+ dopants on the structural, electrical and dielectric behaviour of PbZrO3 nanocrystalline material

  • Muhammad Asim Shahzad,
  • Hafiz Tariq Masood,
  • Muhammad Farooq Warsi,
  • Zaheer Abbas Gilani,
  • Abdullah Saad Alsubaie,
  • Khaled H. Mahmoud,
  • Salah M. El-Bahy,
  • Zeinhom M. El-Bahy,
  • Muhammad Azhar Khan,
  • Muhammad Asghar

DOI
https://doi.org/10.1080/16583655.2022.2061782
Journal volume & issue
Vol. 16, no. 1
pp. 362 – 371

Abstract

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Pb1−4.75xNd0.5xNi4xZrO3 (where x = 0.00, 0.01, 0.02, 0.03, 0.04 and 0.05) nanocrystals were synthesized through the micro-emulsion, a wet chemical route. The prepared samples were annealed at 700°C for 3 h. Nanocrystalline samples were characterized by various techniques like XRD (X-rays diffraction), FTIR (Fourier transform infrared spectroscopy), SEM (Scanning electron microscopy), dielectric properties, and dc-electrical resistivity. XRD analysis of synthesized nanocrystals confirmed the phase development of orthorhombic perovskite structure. The average measured size of nanocrystals was about 21 nm. Some other parameters like densities (bulk and X-rays) and porosity of the nanomaterials were also calculated from obtained XRD data. The obtained results showed the effect of dopant materials (Nd3+ and Ni2+ metal ions) incorporation. The FTIR spectra elucidated the intrinsic cations vibrations in the characteristic perovskite orthorhombic structure. The SEM results revealed that nano-grains were synthesized successfully and their average observed size was 60 nm. It was observed that with the addition of dopant material, the dielectric parameters like dielectric constant, loss factor, and conductivity were showed an overall decreasing trend. The average calculated value of the ac conductivity at the frequency of 3 GHz was observed as 1.45 × 10−2 (Ω-cm)−1. By using the current–voltage (I–V) characteristics, the dc-electrical resistivity was calculated in the range between 2.68 × 1010 and 4.82 × 1010 Ω-cm. The dc-electrical resistivity was increased with the increase of doping contents.

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