Role of Tellurium Ions for Electrochemically Synthesized Zinc Telluride 2D Structures on Nonconductive Substrate

Abstract

Abstract Although electrodeposition has emerged as a promising approach to make metal chalcogenide nanostructures, it has an underlying issue of exfoliating the deposits affixed to a conductive substrate, which is inevitable to transfer electrons for a reduction reaction, for precise characterization and advanced device fabrication. Herein, direct electrodeposition of metal chalcogenides on a silicon dioxide (SiO2) insulator and its device applications for a back‐gated field‐effect‐transistor and a nitrogen dioxide gas sensor are investigated. Tellurium metal nanorods are deposited on SiO2 by the redox reaction of tellurium substances in the electrolyte. Using underpotential deposition, zinc telluride (ZnTe) is propagated onto tellurium sites, which has deposited on SiO2, bridging the microgap electrode on SiO2. The growth mechanisms of ZnTe on the SiO2 are also explored. This finding addresses the major challenge associated with the electrodeposition by the successful deposition of complex chalcogenides on an insulating substrate that expands its applications in fields for advanced electronics.

Keywords

• back‐gated field‐effect‐transistors
• electrodeposition on insulators
• NO 2 sensors
• tellurium chemical reaction
• zinc telluride