C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence

Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu

doi:10.1063/5.0019041

AIP Advances (Aug 2020)

C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence

Xiangjun Shang,
Ben Ma,
Haiqiao Ni,
Zesheng Chen,
Shulun Li,
Yao Chen,
Xiaowu He,
Xingliang Su,
Yujun Shi,
Zhichuan Niu

Affiliations

Xiangjun Shang: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Ben Ma: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Haiqiao Ni: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Zesheng Chen: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Shulun Li: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yao Chen: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Xiaowu He: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Xingliang Su: Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China
Yujun Shi: Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China
Zhichuan Niu: State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

DOI: https://doi.org/10.1063/5.0019041
Journal volume & issue: Vol. 10, no. 8
pp. 085126 – 085126-5

Abstract

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InAs/GaAs quantum dots (QDs) grown on a GaAs (001) substrate were studied by photoluminescence spectroscopy. Both C2v and D3h QDs with featured XX11, X11+, and XX21+ spectra have been found. A local defect field tunes the dominant exciton from X+ to X or X−, enhances the population on XX, XXX, and XXX−, and induces tunneling and spectral diffusion. In D3h QDs, it also induces a prior e1–h2 transition and a structural polarization of XX21+ and XX11 to build a direct cascade XX21+ − X+. Both XX21+ − X+ and XX − X have no fine structure splitting, promising for entangled photon pair emission. A dominant X+ with slow electron capture (due to background holes) proves a pure single-photon emission.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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