A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures

Abstract

In this review, an introduction to nanostructured films focusing on cerium oxide (CeO _2 ) as high dielectric constant ( k ) material for silicon-based metal-oxide-semiconductor devices, and subsequently background of using low k silicon dioxide as well as the transition to high k materials was presented. Moreover, the properties of CeO _2 in general and the applications of CeO _2 and doped CeO _2 films as high k passivation layers were reviewed. The beneficial effect of using CeO _2 seed layers on the characteristics of CeO _2 nanostructures was discussed. Moreover, challenges faced by CeO _2 and the potential of doping trivalent cations into the CeO _2 lattice for enhancement of passivation properties were thoroughly discussed.

Keywords

• CeO2
• doped CeO2
• seed layer
• nanostructures
• high dielectric constant