The study of morphology of heteroepytaxial structures on the basis of photosensitive layers Cd_XHg_1-XTe by electron probe analysis methods

Abstract

Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310) by MBE, have been presented. Peculiarities of growing V-defects have been studied by scanning electronic microscopy techniques and EDS. The structure, orientation, chemical composition of V-defects, causes of appearance and formation have been studied.

Keywords

• solid solution cadmium telluride - mercury telluride c_xhg_1-xte
• molecular beam epitaxy (мbe)
• v-defects
• epitaxial layer
• heterostructure
• scanning electronic microscopy (sem)
• electronic probe x-ray microanalysis (epma)