Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves

Abstract

Performed in this work are the researches of the influence of microwave irradiation (2.45 GHz, 24 GHz) on spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. Transformation of impurity-defect centers in CdTe:Cl responsible for PL within the spectral range 1.3 to 1.5 eV under microwave irradiation was analyzed. The parameter of electron-phonon interaction (Huang–Rhys factor) for the donor-acceptor PL band, which depends on the time of microwave irradiation, has been calculated.

Keywords

• photoluminescence
• microwave irradiation
• Huang–Rhys factor
• donor-acceptor pair