Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Zhang Liying; Xiu Xiangqian; Li Yuewen; Zhu Yuxia; Hua Xuemei; Xie Zili; Tao Tao; Liu Bin; Chen Peng; Zhang Rong; Zheng Youdou

doi:10.1515/nanoph-2020-0295

Nanophotonics (Sep 2020)

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Zhang Liying,
Xiu Xiangqian,
Li Yuewen,
Zhu Yuxia,
Hua Xuemei,
Xie Zili,
Tao Tao,
Liu Bin,
Chen Peng,
Zhang Rong,
Zheng Youdou

Affiliations

Zhang Liying: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Xiu Xiangqian: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Li Yuewen: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Zhu Yuxia: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Hua Xuemei: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Xie Zili: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Tao Tao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Liu Bin: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Chen Peng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Zhang Rong: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China
Zheng Youdou: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing210023, P. R. China

DOI: https://doi.org/10.1515/nanoph-2020-0295
Journal volume & issue: Vol. 9, no. 15
pp. 4497 – 4503

Abstract

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Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

Published in Nanophotonics

ISSN: 2192-8606 (Print); 2192-8614 (Online)
Publisher: De Gruyter
Country of publisher: Germany
LCC subjects: Science: Physics
Website: https://www.degruyter.com/journal/key/nanoph/html#submit

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