Nanomaterials (Dec 2024)

A Reconfigurable Polarimetric Photodetector Based on the MoS<sub>2</sub>/PdSe<sub>2</sub> Heterostructure with a Charge-Trap Gate Stack

  • Xin Huang,
  • Qinghu Bai,
  • Yang Guo,
  • Qijie Liang,
  • Tengzhang Liu,
  • Wugang Liao,
  • Aizi Jin,
  • Baogang Quan,
  • Haifang Yang,
  • Baoli Liu,
  • Changzhi Gu

DOI
https://doi.org/10.3390/nano14231936
Journal volume & issue
Vol. 14, no. 23
p. 1936

Abstract

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Besides the intensity and wavelength, the ability to analyze the optical polarization of detected light can provide a new degree of freedom for numerous applications, such as object recognition, biomedical applications, environmental monitoring, and remote sensing imaging. However, conventional filter-integrated polarimetric sensing systems require complex optical components and a complicated fabrication process, severely limiting their on-chip miniaturization and functionalities. Herein, the reconfigurable polarimetric photodetection with photovoltaic mode is developed based on a few-layer MoS2/PdSe2 heterostructure channel and a charge-trap structure composed of Al2O3/HfO2/Al2O3 (AHA)-stacked dielectrics. Because of the remarkable charge-trapping ability of carriers in the AHA stack, the MoS2/PdSe2 channel exhibits a high program/erase current ratio of 105 and a memory window exceeding 20 V. Moreover, the photovoltaic mode of the MoS2/PdSe2 Schottky diode can be operated and manipulable, resulting in high and distinct responsivities in the visible broadband. Interestingly, the linear polarization of the device can be modulated under program/erase states, enabling the reconfigurable capability of linearly polarized photodetection. This study demonstrates a new prototype heterostructure-based photodetector with the capability of both tunable responsivity and linear polarization, demonstrating great potential application toward reconfigurable photosensing and polarization-resolved imaging applications.

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