Opto-Electronic Advances (Apr 2020)

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

  • Kumar Kalapala Akhil Raj,
  • Liu Dong,
  • Cho Sang June,
  • Park Jeongpil,
  • Zhao Deyin,
  • Albrecht John D.,
  • Moody Baxter,
  • Ma Zhenqiang,
  • Zhou Weidong

DOI
https://doi.org/10.29026/oea.2020.190025
Journal volume & issue
Vol. 3, no. 4
pp. 190025-1 – 190025-6

Abstract

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We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.

Keywords