A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

Abstract

Abstract Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are needed to be measured through whole sampling inspection process. For that, a novel hybrid optical probe working based on optical interferometry, confocal microscopy and optical microscopy was proposed and realized for enhancing inspection efficiency in this report. The optical microscope was utilized for coarsely monitoring the specimen in a large field of view, and the other methods of interferometry and confocal microscopy were used to measure dimensions of small features with high speed by eliminating time-consuming process of the vertical scanning. Owing to the importance of the reliability, the uncertainty evaluation of the proposed method was fulfilled, which offers a practical example for estimating the performance of inspection machines operating with numerous principles at semiconductor manufacturing sites. According to the measurement results, the mean values of the diameter and depth were 40.420 µm and 5.954 µm with the expanded uncertainty of 0.050 µm (k = 2) and 0.208 µm (k = 2), respectively.

Keywords

• Through-silicon Vias (TSV)
• Three-dimensional Profile
• Major Uncertainty Components
• Optical Path Difference (OPD)
• International Standard Guidelines