Large quantum-spin-Hall gap in single-layer 1T′ WSe2

P. Chen; Woei Wu Pai; Y.-H. Chan; W.-L. Sun; C.-Z. Xu; D.-S. Lin; M. Y. Chou; A.-V. Fedorov; T.-C. Chiang

doi:10.1038/s41467-018-04395-2

Nature Communications (May 2018)

Large quantum-spin-Hall gap in single-layer 1T′ WSe2

P. Chen,
Woei Wu Pai,
Y.-H. Chan,
W.-L. Sun,
C.-Z. Xu,
D.-S. Lin,
M. Y. Chou,
A.-V. Fedorov,
T.-C. Chiang

Affiliations

P. Chen: Department of Physics, University of Illinois at Urbana-Champaign
Woei Wu Pai: Center for Condensed Matter Sciences, National Taiwan University
Y.-H. Chan: Institute of Atomic and Molecular Sciences, Academia Sinica
W.-L. Sun: Department of Physics, National Tsing Hua University
C.-Z. Xu: Department of Physics, University of Illinois at Urbana-Champaign
D.-S. Lin: Department of Physics, National Tsing Hua University
M. Y. Chou: Department of Physics, National Taiwan University
A.-V. Fedorov: Advanced Light Source, Lawrence Berkeley National Laboratory
T.-C. Chiang: Department of Physics, University of Illinois at Urbana-Champaign

DOI: https://doi.org/10.1038/s41467-018-04395-2
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 7

Abstract

Read online

The current known two-dimensional topological insulators with small band gaps limit the potential for room temperature applications. Here, Chen et al. observe a sizable gap of 129 meV in a 1T'-WSe2 single layer grown on bilayer graphene with in-gap edge state near the layer boundary.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

About the journal