Exciton Lasing in ZnO-ZnCr2O4 Nanowalls

Tejendra Dixit; Jitesh Agrawal; Miryala Muralidhar; Masato Murakami; Kolla Lakshmi Ganapathi; Vipul Singh; M. S. Ramachandra Rao

doi:10.1109/JPHOT.2019.2945010

IEEE Photonics Journal (Jan 2019)

Exciton Lasing in ZnO-ZnCr2O4 Nanowalls

Tejendra Dixit,
Jitesh Agrawal,
Miryala Muralidhar,
Masato Murakami,
Kolla Lakshmi Ganapathi,
Vipul Singh,
M. S. Ramachandra Rao

Affiliations

Tejendra Dixit: ORCiD; Materials Science Research Centre and Department of Physics, Indian Institute of Technology, Madras, Chennai, India
Jitesh Agrawal: ORCiD; Department of Electrical Engineering, Indian Institute of Technology, Indore, Indore, India
Miryala Muralidhar: ORCiD; Superconducting Material Laboratory, Graduate School of Science and Engineering, Shibaura Institute of Technology, Tokyo, Japan
Masato Murakami: Superconducting Material Laboratory, Graduate School of Science and Engineering, Shibaura Institute of Technology, Tokyo, Japan
Kolla Lakshmi Ganapathi: ORCiD; Materials Science Research Centre and Department of Physics, Indian Institute of Technology, Madras, Chennai, India
Vipul Singh: ORCiD; Department of Electrical Engineering, Indian Institute of Technology, Indore, Indore, India
M. S. Ramachandra Rao: ORCiD; Materials Science Research Centre and Department of Physics, Indian Institute of Technology, Madras, Chennai, India

DOI: https://doi.org/10.1109/JPHOT.2019.2945010
Journal volume & issue: Vol. 11, no. 6
pp. 1 – 7

Abstract

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We demonstrate low power continuous wave, red and NIR exciton lasing with FWHM of 1 nm, quality factor of 680 and threshold power of 100 μW in ZnO-ZnCr2O4 nanowalls. The NIR lasing was enabled by integrating ZnO with ZnCr2O4. Moreover, wavelength selective photoluminescence (tuning from UV to NIR) and enhanced two-photon emission were also observed in ZnO-ZnCr2O4 nanowalls. The exciton-exciton scattering can be attributed to the observation of exciton lasing at low temperature (<; 200 K). A plausible mechanism has been elucidated in order to explain the results. This work will open new opportunities in the advancement of oxide semiconductors based exciton lasers.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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