Nanoscale Research Letters (Jan 2008)

Hot Photoluminescence in &#947;-In<sub>2</sub>Se<sub>3</sub>Nanorods

  • Chen LC,
  • Lan SM,
  • Chen KH,
  • Huang PJ,
  • Chi GC,
  • Lin TY,
  • Yang MD,
  • Hu CH,
  • Shen JL

Journal volume & issue
Vol. 3, no. 11
pp. 427 – 430

Abstract

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Abstract The energy relaxation of electrons in γ-In2Se3nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (T e) of the hot electrons. TheT evariation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3nanorods may be a promising material for the photovoltaic devices.

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