Nature Communications (Oct 2019)
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
Abstract
Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 × 106 A/W and 1.65 × 104 A/W in the visible–infrared wavelength range and fast photoresponse.