Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

Xu Wang; Zhengwei Chen; Fabi Zhang; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo

doi:10.1063/1.4940763

AIP Advances (Jan 2016)

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

Xu Wang,
Zhengwei Chen,
Fabi Zhang,
Katsuhiko Saito,
Tooru Tanaka,
Mitsuhiro Nishio,
Qixin Guo

Affiliations

Xu Wang: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
Zhengwei Chen: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
Fabi Zhang: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
Katsuhiko Saito: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
Tooru Tanaka: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
Mitsuhiro Nishio: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
Qixin Guo: Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan

DOI: https://doi.org/10.1063/1.4940763
Journal volume & issue: Vol. 6, no. 1
pp. 015111 – 015111-10

Abstract

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We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa)2O3 thin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in β-(AlGa)2O3 thin films, which can provide an experimental basis for realization of (AlGa)2O3-based optoelectronic device applications.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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