Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Dec 2008)

Investigation of thermometrical characteristics of p+–n-GaP diodes

  • Sypko N. I.,
  • Shutov S. V.,
  • Fonkich A. М.,
  • Kopko D. P.,
  • Shwarts М. M.,
  • Shwarts Yu. M.,
  • Krasnov V. A.,
  • Erohin S. Yu.

Journal volume & issue
no. 6
pp. 38 – 40

Abstract

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The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

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