IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Jan 2018)

Improving Energy Efficiency of Low-Voltage Logic by Technology-Driven Design

  • Kaushik Vaidyanathan,
  • Daniel H. Morris,
  • Uygar E. Avci,
  • Huichu Liu,
  • Tanay Karnik,
  • Hong Wang,
  • Ian A. Young

DOI
https://doi.org/10.1109/JXCDC.2018.2812242
Journal volume & issue
Vol. 4, no. 1
pp. 10 – 18

Abstract

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Reducing VDD while keeping leakage current low is critical for minimizing energy consumption for systems across the compute-continuum, especially in IoT. Emerging low-VDD logic devices such as tunnel FET (TFETs) offer better low-VDD performance than conventional MOSFETs but lack performance at high-VDD. To assess TFETs, and other transistors optimized for low-VDD operation, we propose a technology-driven design framework. Our framework adapts standard industry flows and tools to optimize the design of logic blocks with full consideration of the tradeoffs possible with the future generation device I-V characteristics and interconnect. Proposed approach optimizes design implementation to improve projected power-performance and area, as well as, expected accuracy of the projections. TFET improves energy efficiency by 2.35× and 1.35× over MOSFET at low- and high-performance points, respectively, for industrial design test cases. Accuracy of the energy efficiency and performance projections is improved by 71% and 40%, respectively.

Keywords