Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases

Abstract

Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.