Nanophotonics (Jan 2018)

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

  • Ou Yiyu,
  • Iida Daisuke,
  • Liu Jin,
  • Wu Kaiyu,
  • Ohkawa Kazuhiro,
  • Boisen Anja,
  • Petersen Paul Michael,
  • Ou Haiyan

DOI
https://doi.org/10.1515/nanoph-2017-0057
Journal volume & issue
Vol. 7, no. 1
pp. 317 – 322

Abstract

Read online

We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

Keywords