Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

Bolin Liao; A. A. Maznev; Keith A. Nelson; Gang Chen

doi:10.1038/ncomms13174

Nature Communications (Oct 2016)

Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

Bolin Liao,
A. A. Maznev,
Keith A. Nelson,
Gang Chen

Affiliations

Bolin Liao: Department of Mechanical Engineering, Massachusetts Institute of Technology
A. A. Maznev: Department of Chemistry, Massachusetts Institute of Technology
Keith A. Nelson: Department of Chemistry, Massachusetts Institute of Technology
Gang Chen: Department of Mechanical Engineering, Massachusetts Institute of Technology

DOI: https://doi.org/10.1038/ncomms13174
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 7

Abstract

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Direct measurement of electron-phonon interactions at the single-mode level has been a challenge. Here, Liaoet al. use a three-pulse photoacoustic spectroscopy technique to investigate the damping of a single sub-terahertz coherent phonon mode by photo-excited free charge carriers in silicon at room temperature.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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