Medžiagotyra (Jun 2014)

Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover

  • Algirdas SUŽIEDĖLIS,
  • Steponas AŠMONTAS,
  • Jonas GRADAUSKAS,
  • Viktorija NARGELIENĖ,
  • Aurimas ČERŠKUS,
  • Andžej LUČUN,
  • Tomas ANBINDERIS,
  • Irina PAPSUJEVA,
  • Aleksandras NARKŪNAS,
  • Benas KUNDROTAS,
  • Roma RINKEVIČIENĖ

DOI
https://doi.org/10.5755/j01.ms.20.2.6319
Journal volume & issue
Vol. 20, no. 2
pp. 138 – 140

Abstract

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In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al0.25Ga0.75As heterostructures have been measured. DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6319

Keywords