Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective

Panpan Li; Jacob Ewing; Matthew S. Wong; Yifan Yao; Hongjian Li; Srinivas Gandrothula; Jordan M. Smith; Mike Iza; Shuji Nakamura; Steven P. DenBaars

doi:10.1063/5.0222618

APL Materials (Aug 2024)

Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective

Panpan Li,
Jacob Ewing,
Matthew S. Wong,
Yifan Yao,
Hongjian Li,
Srinivas Gandrothula,
Jordan M. Smith,
Mike Iza,
Shuji Nakamura,
Steven P. DenBaars

Affiliations

Panpan Li: Materials Department, University of California, Santa Barbara, California 93106, USA
Jacob Ewing: Materials Department, University of California, Santa Barbara, California 93106, USA
Matthew S. Wong: Materials Department, University of California, Santa Barbara, California 93106, USA
Yifan Yao: Materials Department, University of California, Santa Barbara, California 93106, USA
Hongjian Li: Materials Department, University of California, Santa Barbara, California 93106, USA
Srinivas Gandrothula: Materials Department, University of California, Santa Barbara, California 93106, USA
Jordan M. Smith: Materials Department, University of California, Santa Barbara, California 93106, USA
Mike Iza: Materials Department, University of California, Santa Barbara, California 93106, USA
Shuji Nakamura: Materials Department, University of California, Santa Barbara, California 93106, USA
Steven P. DenBaars: Materials Department, University of California, Santa Barbara, California 93106, USA

DOI: https://doi.org/10.1063/5.0222618
Journal volume & issue: Vol. 12, no. 8
pp. 080901 – 080901-12

Abstract

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Micro-light-emitting diodes (µLEDs) are gathering significant interest as a technology for emerging micro-displays. However, µLEDs encounter numerous obstacles, including size-dependent efficiency loss, poor efficiency of red µLEDs, and challenges associated with the mass transfer and integration of full-color µLEDs. These issues become more acute in ultra-small µLEDs (<5 µm), which were required by the augmented reality (AR) displays. Here, we discuss the principal challenges faced by µLEDs and explore the possible solutions. We highlight recent advances in InGaN-based RGB µLEDs tailored for AR displays. In particular, we discuss the advancements in ultra-small InGaN µLEDs scaled down to 1 µm, the developments in InGaN red µLEDs, and the implementation of tunnel junction-based cascaded InGaN µLEDs for monolithic integration.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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