Materials (Sep 2021)
New Approaches and Understandings in the Growth of Cubic Silicon Carbide
- Francesco La Via,
- Massimo Zimbone,
- Corrado Bongiorno,
- Antonino La Magna,
- Giuseppe Fisicaro,
- Ioannis Deretzis,
- Viviana Scuderi,
- Cristiano Calabretta,
- Filippo Giannazzo,
- Marcin Zielinski,
- Ruggero Anzalone,
- Marco Mauceri,
- Danilo Crippa,
- Emilio Scalise,
- Anna Marzegalli,
- Andrey Sarikov,
- Leo Miglio,
- Valdas Jokubavicius,
- Mikael Syväjärvi,
- Rositsa Yakimova,
- Philipp Schuh,
- Michael Schöler,
- Manuel Kollmuss,
- Peter Wellmann
Affiliations
- Francesco La Via
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Massimo Zimbone
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Corrado Bongiorno
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Antonino La Magna
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Giuseppe Fisicaro
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Ioannis Deretzis
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Viviana Scuderi
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Cristiano Calabretta
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Filippo Giannazzo
- Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
- Marcin Zielinski
- NOVASIC, Savoie Technolac—Arche Bat.4, Allée du Lac d’Aiguebelette, BP 267, 73375 Le Bourget du Lac CEDEX, France
- Ruggero Anzalone
- STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy
- Marco Mauceri
- LPE, Strada XVI, Pantano d’Arci, 95121 Catania, Italy
- Danilo Crippa
- LPE, Strada XVI, Pantano d’Arci, 95121 Catania, Italy
- Emilio Scalise
- L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
- Anna Marzegalli
- L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, 22100 Como, Italy
- Andrey Sarikov
- L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
- Leo Miglio
- L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
- Valdas Jokubavicius
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 581 83 Linköping, Sweden
- Mikael Syväjärvi
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 581 83 Linköping, Sweden
- Rositsa Yakimova
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 581 83 Linköping, Sweden
- Philipp Schuh
- Crystal Growth Lab, Materials Department 6 (i-MEET), Friedrich-Alexander University Erlangen-Nürnberg (FAU), 91058 Erlangen, Germany
- Michael Schöler
- Crystal Growth Lab, Materials Department 6 (i-MEET), Friedrich-Alexander University Erlangen-Nürnberg (FAU), 91058 Erlangen, Germany
- Manuel Kollmuss
- Crystal Growth Lab, Materials Department 6 (i-MEET), Friedrich-Alexander University Erlangen-Nürnberg (FAU), 91058 Erlangen, Germany
- Peter Wellmann
- Crystal Growth Lab, Materials Department 6 (i-MEET), Friedrich-Alexander University Erlangen-Nürnberg (FAU), 91058 Erlangen, Germany
- DOI
- https://doi.org/10.3390/ma14185348
- Journal volume & issue
-
Vol. 14,
no. 18
p. 5348
Abstract
In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.
Keywords