Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Feb 2014)

Magnetic and kinetic properties of crystals Hg1–x–yCdxDyySe

  • Kovalyuk T. T. ,
  • Maistruk E. V.,
  • Maryanchuk P. D.

DOI
https://doi.org/10.15222/tkea2014.1.47
Journal volume & issue
no. 1
pp. 47 – 51

Abstract

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This paper presents research results on the magnetic and kinetic properties of Hg1–x–yCdxDyySe crystals. The coefficient of thermoelectric figure of merit of Hg1–x–yCdxDyySe crystals is determined on the basis of the temperature dependence of electrical conductivity and thermoelectric power. The temperature dependence of the magnetic susceptibility ??has the form typical for paramagnets and decreases with the temperature increase. The growth of ? with the decrease of T results from the decrease in the disorienting effect of thermal vibrations of the atoms in crystal lattice on orientation of the magnetic moments of Dy in magnetic field. The authors have established that the characteristics of the magnetic susceptibility result from the presence of clusters with different sizes. The characteristic properties of the changes in kinetic coefficients with temperature variation for Hg1–x–yCdxDyySe samples suggests that vacancies in the Se sublattice and interstitial mercury mainly affect the transport phenomena in these crystals. It is known that mercury chalcogenides and solid solutions based on mercury interstitials and vacancies in the chalcogen sublattice are donors. The temperature dependence of the electrical conductivity for Hg1–x–yCdxDyySe are metallic in character, that is s decreases with increasing temperature due to decreasing mobility of electrons, the Hall coefficient of the crystals Hg1–x–yCdxDyySe does not depend on temperature, which is associated with the degeneracy of the electron gas. Thermoelectric power for Hg1–x–yCdxDyySe samples is negative and its absolute value increases with the temperature increase due to reduction in the degree of degeneracy of the electron gas. Research results indicate prospects of the application of Hg1–x–yCdxDyySe crystals in spintronics devices.

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