Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping

Ling Wang; Tsukasa Katayama; Chaoyue Wang; Qin Li; Yun Shi; Yuqiang Fang; Fuqiang Huang; Yinghao Zhu; Hai-feng Li; Shintaro Yasui; Xintang Huang; Jianding Yu

doi:10.1063/5.0088234

AIP Advances (Jun 2022)

Enhancement of room-temperature magnetization in GaFeO3-type single crystals by Al and Sc doping

Ling Wang,
Tsukasa Katayama,
Chaoyue Wang,
Qin Li,
Yun Shi,
Yuqiang Fang,
Fuqiang Huang,
Yinghao Zhu,
Hai-feng Li,
Shintaro Yasui,
Xintang Huang,
Jianding Yu

Affiliations

Ling Wang: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
Tsukasa Katayama: Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
Chaoyue Wang: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
Qin Li: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
Yun Shi: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
Yuqiang Fang: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
Fuqiang Huang: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
Yinghao Zhu: Institute of Applied Physics and Materials Engineering, University of Macau, Taipa 999078, Macau SAR, China
Hai-feng Li: Institute of Applied Physics and Materials Engineering, University of Macau, Taipa 999078, Macau SAR, China
Shintaro Yasui: Laboratory for Advanced Nuclear Energy, Tokyo Institute of Technology, Tokyo 152-8550, Japan
Xintang Huang: College of Physical Science and Technology, Central China Normal University, Wuhan 430079, China
Jianding Yu: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China

DOI: https://doi.org/10.1063/5.0088234
Journal volume & issue: Vol. 12, no. 6
pp. 065015 – 065015-5

Abstract

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GaFeO3-type oxides are promising multiferroic materials due to the coexistence of spontaneous magnetization and ferroelectric polarization properties at room temperature. As these ferroic properties feature a large anisotropy, single crystals are required. However, the magnetization of GaFeO3-type single crystals remains low at room temperature. In this study, we largely enhanced the magnetization at room temperature of GaFeO3-type single crystals by increasing the Fe content and co-doping Sc3+ and Al3+. Single crystals of AlxSc0.1−xGa0.6Fe1.3O3 (x = 0.01–0.04) were prepared using the optical floating-zone method. The single crystals were rod-shaped, with a diameter and length of ∼6 mm and 7 cm, respectively. X-ray diffraction measurements confirmed the ferroelectric polarization of the crystals. In addition, they exhibited room-temperature ferrimagnetism, with Curie temperature in the range of 326–338 K; the crystals exhibit magnetic anisotropy along the a-axis. The magnetization of the single crystal at 300 K and 0.3 kOe was 13 emu g−1, which is over ten times larger than those of previously reported single crystals with GaFeO3-type crystal structure.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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