Special Issue: Nanowire Field-Effect Transistor (FET)

Abstract

This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles’ content.

Keywords

• nanowire field-effect transistors
• metal gate
• material properties
• fabrication
• modelling
• variability