Shrink effects on nanoscale MOS capacitor in visible and NIR spectral Ranges

Abstract

This research explores the influence of visible and near-infrared light on the electrical characteristics of nanoscale MOS capacitors, examining the effects of light intensity and spectral composition. Photon absorption within the device stimulates an enhancement of the inversion electron layer. A spectral analysis encompassing the ultraviolet to near-infrared range (400–1100 nm) is presented. Research on nanoscale devices of this nature can contribute to a profound understanding of fundamental light-matter interactions at the atomic and molecular scale. This knowledge can pave the way for the development of novel optoelectronic coupled devices, which combine light trigger and electronic functionalities. These devices, when integrated in Photonics Integrated Circuits (PICs), could have applications in areas such as solar cells, photodetectors, and future ultrasmall electronic components.

Keywords

• Nanoscale MOS Capacitor
• Shrink Effects
• Numerical model
• C-V characteristics analysis