Фізика і хімія твердого тіла (Dec 2015)

Low-Impedance Investigations of Hydrogenated GaSe Layered Crystals

  • V. M. Kaminskii,
  • T. I. Bratanich,
  • Z. D. Kovalyuk,
  • V. B. Boledzyuk,
  • V. I. Ivanov,
  • V. V. Netyaga

DOI
https://doi.org/10.15330/pcss.16.4.654-657
Journal volume & issue
Vol. 16, no. 4
pp. 654 – 657

Abstract

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The structure, electrical and dielectric properties of hydrogenated gallium selenide crystals were investigated. It was shown that AC-conduction mechanism along the crystallographic axis C in the 103–105 Hz have hopping character. The parameters of the band theory of hopping conduction were calculated. The frequency dependence of ε' and ε'' components of permittivity in HxGaSe were obtained. Keywords: gallium selenide, hopping conduction, permittivity.