On the mechanisms of J c increment and degradation in high-J c Ba122 tapes made by different processing methods

F. Kametani; Y. Su; C. Tarantini; E. Hellstrom; A. Matsumoto; H. Kumakura; K. Togano; H. Huang; Y. Ma

doi:10.35848/1882-0786/ad1891

Applied Physics Express (Jan 2024)

On the mechanisms of J c increment and degradation in high-J c Ba122 tapes made by different processing methods

F. Kametani,
Y. Su,
C. Tarantini,
E. Hellstrom,
A. Matsumoto,
H. Kumakura,
K. Togano,
H. Huang,
Y. Ma

Affiliations

F. Kametani: ORCiD; Applied Superconductivity Center, National High Field Magnetic Field Laboratory, Florida State University , FL 32310, United States of America; Mechanical Engineering, FAMU-FSU College of Engineering, Florida State University , FL 32310, United States of America
Y. Su: Applied Superconductivity Center, National High Field Magnetic Field Laboratory, Florida State University , FL 32310, United States of America; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, United States of America
C. Tarantini: ORCiD; Applied Superconductivity Center, National High Field Magnetic Field Laboratory, Florida State University , FL 32310, United States of America
E. Hellstrom: Applied Superconductivity Center, National High Field Magnetic Field Laboratory, Florida State University , FL 32310, United States of America; Mechanical Engineering, FAMU-FSU College of Engineering, Florida State University , FL 32310, United States of America
A. Matsumoto: ORCiD; National Institute of Materials Science, Tsukuba, Japan
H. Kumakura: National Institute of Materials Science, Tsukuba, Japan
K. Togano: National Institute of Materials Science, Tsukuba, Japan
H. Huang: Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China
Y. Ma: Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; University of Chinese Academy of Sciences , Beijing 100049, People’s Republic of China

DOI: https://doi.org/10.35848/1882-0786/ad1891
Journal volume & issue: Vol. 17, no. 1
p. 013004

Abstract

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We compared the grain and grain boundary (GB) nanostructures in two Ba122 tapes with similarly high J _c . The Ag-sheathed tape made by hot pressing has larger, more plate-like grains with better c -axis alignment but has more GBs blocked by FeAs and Ba–O. In contrast, the tape made by cold pressing with an Ag-Sn/stainless steel sheath possesses fewer plate-like grains and weaker grain alignment but has more continuous current paths with clean physically well-connected GBs. Our nanostructural comparison emphasizes the strong need to achieve both good grain alignment and clean GBs for further J _c improvement of Ba122 tapes.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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