Micromachines (Aug 2021)

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

  • Nayan C. Das,
  • Minjae Kim,
  • Jarnardhanan R. Rani,
  • Sung-Min Hong,
  • Jae-Hyung Jang

DOI
https://doi.org/10.3390/mi12091049
Journal volume & issue
Vol. 12, no. 9
p. 1049

Abstract

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Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

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