Applying InP/ZnS Green-Emitting Quantum Dots and InP/ZnSe/ZnS Red-Emitting Quantum Dots to Prepare WLED With Enhanced Photoluminescence Performances

Luqiao Yin; Doudou Zhang; Yuxian Yan; Fan Cao; Gongli Lin; Xuyong Yang; Wanwan Li; Jianhua Zhang

doi:10.1109/ACCESS.2020.3015212

IEEE Access (Jan 2020)

Applying InP/ZnS Green-Emitting Quantum Dots and InP/ZnSe/ZnS Red-Emitting Quantum Dots to Prepare WLED With Enhanced Photoluminescence Performances

Luqiao Yin,
Doudou Zhang,
Yuxian Yan,
Fan Cao,
Gongli Lin,
Xuyong Yang,
Wanwan Li,
Jianhua Zhang

Affiliations

Luqiao Yin: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, China
Doudou Zhang: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, China
Yuxian Yan: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, China
Fan Cao: Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, China
Gongli Lin: State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
Xuyong Yang: ORCiD; Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, China
Wanwan Li: State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
Jianhua Zhang: ORCiD; Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, China

DOI: https://doi.org/10.1109/ACCESS.2020.3015212
Journal volume & issue: Vol. 8
pp. 154683 – 154690

Abstract

Read online

Based on blue LED chips to excite Ce-doped yttrium aluminum garnet (YAG: Ce3+) yellow phosphors, InP/ZnS green-emitting quantum dots (QDs) and InP/ZnSe/ZnS red-emitting QDs are used as light conversion materials for WLEDs to improve the color rendering index (CRI) of the device and improve its color coordinates. We have proven this in previous work. But in the previous work, we only studied the CRI of the driving current from 5 mA to 100 mA. The CRI and the Commission International de L'Eclairage (CIE) chromaticity coordinates of the WLED device prepared before is not ideal under high current conditions. The emission peak position of InP/ZnSe/ZnS red-emitting QDs we used in previous work is 605nm. In this article, we adjusted the emission peak position of InP/ZnSe/ZnS red-emitting QDs to 611nm, and prepared WLED in the same way, which improved the problem that the CRI of WLED devices decreases rapidly and the chromaticity coordinates change greatly under high current conditions. The CRI of prepared WLED device in this article was increased to 91.0, the CIE chromaticity coordinates is (0.3365, 0.3334), and the correlated color temperature (CCT) is 5313 K. We also tested the dependence of the electroluminescence (EL) spectrum, CRI, CCT and chromaticity coordinates of the prepared WLED device on the current. Compared with the prepared WLED device before, the CRI of the WLED device prepared in this article has always remained above 90, hovering between 90 ~ 91, very stable. The chromaticity coordinate distribution is also very concentrated, the amplitude of the offset black body radiation is small, and it shows excellent color rendering and stable working performance. A 30-day aging test was performed on the prepared WLED device.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

About the journal

Abstract

Keywords