Nature Communications (Oct 2021)
Magnetic memory driven by topological insulators
- Hao Wu,
- Aitian Chen,
- Peng Zhang,
- Haoran He,
- John Nance,
- Chenyang Guo,
- Julian Sasaki,
- Takanori Shirokura,
- Pham Nam Hai,
- Bin Fang,
- Seyed Armin Razavi,
- Kin Wong,
- Yan Wen,
- Yinchang Ma,
- Guoqiang Yu,
- Gregory P. Carman,
- Xiufeng Han,
- Xixiang Zhang,
- Kang L. Wang
Affiliations
- Hao Wu
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California
- Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Peng Zhang
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California
- Haoran He
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California
- John Nance
- Department of Mechanical and Aerospace Engineering, University of California
- Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Julian Sasaki
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
- Takanori Shirokura
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
- Pham Nam Hai
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
- Bin Fang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Seyed Armin Razavi
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California
- Kin Wong
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California
- Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Gregory P. Carman
- Department of Mechanical and Aerospace Engineering, University of California
- Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Kang L. Wang
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California
- DOI
- https://doi.org/10.1038/s41467-021-26478-3
- Journal volume & issue
-
Vol. 12,
no. 1
pp. 1 – 7
Abstract
It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ device at room temperature, very promising for TI-driven magnetic memory.
