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Nanoscale Research Letters
(Aug 2017)
Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Bogdan I. Tsykaniuk,
Andrii S. Nikolenko,
Viktor V. Strelchuk,
Viktor M. Naseka,
Yuriy I. Mazur,
Morgan E. Ware,
Eric A. DeCuir,
Bogdan Sadovyi,
Jan L. Weyher,
Rafal Jakiela,
Gregory J. Salamo,
Alexander E. Belyaev
Affiliations
Bogdan I. Tsykaniuk
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Andrii S. Nikolenko
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Viktor V. Strelchuk
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Viktor M. Naseka
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Yuriy I. Mazur
Institute for Nanoscience and Engineering, University of Arkansas
Morgan E. Ware
Institute for Nanoscience and Engineering, University of Arkansas
Eric A. DeCuir
Institute for Nanoscience and Engineering, University of Arkansas
Bogdan Sadovyi
Institute of High Pressure Physics, Polish Academy of Sciences
Jan L. Weyher
Institute of High Pressure Physics, Polish Academy of Sciences
Rafal Jakiela
Institute of Physics, Polish Academy of Sciences
Gregory J. Salamo
Institute for Nanoscience and Engineering, University of Arkansas
Alexander E. Belyaev
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
DOI
https://doi.org/10.1186/s11671-017-2227-1
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 1
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