CHARACTERISTICS OF A THIN CONDUCTIVE FILM BY PLASMON RESONANCES

Abstract

Purpose. The paper describes and studies a method for determining the characteristics of thin flat conducting films based on the use of plasmon resonances. Methodology and Approach. The dependences of the reflection and transmission coefficients of radiation on the frequency for a thin conducting film are studied and analyzed by using theoretical relations taking into account the dielectric permittivity of the conduction electron plasma. Results. A method for measuring the characteristics of thin conducting films by plasmon resonances is proposed and described. The features of plasma resonances are investigated. The relationship between the frequencies of plasmon resonances and the characteristics of a thin conducting film, such as its thickness and temperature, is shown, which makes it possible to measure the characteristics of the film using these resonant frequencies. Conditions for the film thickness measured by this method are obtained. An estimate is given for the frequency difference of plasmon resonances. Theoretical and practical implications. The proposed method for measuring the characteristics of thin conducting films can be used in microelectronics to control the parameters of integrated circuits, in optics to determine the thickness of thin layers of optical structures, and in industry to control thin film coatings.

Keywords

• optical coefficients
• nanofilm
• electron plasma
• plasmon resonance