Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

• Bogdan I. Tsykaniuk,
• Andrii S. Nikolenko,
• Viktor V. Strelchuk,
• Viktor M. Naseka,
• Yuriy I. Mazur,
• Morgan E. Ware,
• Eric A. DeCuir,
• Bogdan Sadovyi,
• Jan L. Weyher,
• Rafal Jakiela,
• Gregory J. Salamo,
• Alexander E. Belyaev

Affiliations

Bogdan I. Tsykaniuk

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine

Andrii S. Nikolenko

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine

Viktor V. Strelchuk

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine

Viktor M. Naseka

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine

Yuriy I. Mazur

Institute for Nanoscience and Engineering, University of Arkansas

Morgan E. Ware

Institute for Nanoscience and Engineering, University of Arkansas

Eric A. DeCuir

Institute for Nanoscience and Engineering, University of Arkansas

Bogdan Sadovyi

Institute of High Pressure Physics, Polish Academy of Sciences

Jan L. Weyher

Institute of High Pressure Physics, Polish Academy of Sciences

Rafal Jakiela

Institute of Physics, Polish Academy of Sciences

Gregory J. Salamo

Institute for Nanoscience and Engineering, University of Arkansas

Alexander E. Belyaev

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine